Wide-Bandgap Power Electronics (SiC/GaN): Packaging, Reliability, and Application Roadmaps

Authors

    Emily Turner Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, USA.
    Mahmoud Taha * Department of Architectural Engineering, University of Jordan, Amman, Jordan. mahmoud.taha@ju.edu.jo

Keywords:

Wide-bandgap semiconductors, silicon carbide (SiC), gallium nitride (GaN), power electronics, packaging, reliability, lifetime modeling, digital twin, sustainability, application roadmap

Abstract

This study aims to synthesize and critically evaluate recent advancements in packaging technologies, reliability modeling, and application roadmaps for silicon carbide (SiC) and gallium nitride (GaN) wide-bandgap power electronics, emphasizing their convergence toward next-generation high-efficiency, high-reliability energy systems. This review adopted a qualitative design based on a systematic literature review of peer-reviewed journal articles published between 2014 and 2024. A total of 19 high-quality studies were selected from databases including IEEE Xplore, ScienceDirect, and SpringerLink, following inclusion and exclusion criteria aligned with PRISMA guidelines. Data collection relied solely on literature analysis, and data interpretation employed thematic synthesis through Nvivo 14 software. Open, axial, and selective coding techniques were used to identify patterns and relationships among technological trends, with theoretical saturation achieved after comprehensive coding iterations. Four major themes emerged: (1) Advanced Packaging Technologies—highlighting high-temperature materials, 3D embedded packaging, and parasitic inductance reduction; (2) Reliability and Lifetime Modeling—addressing thermo-mechanical fatigue, gate oxide degradation, and hybrid physics–machine learning prognostics; (3) Application Roadmaps and Sectoral Integration—mapping SiC’s dominance in high-voltage EV, grid, and industrial systems versus GaN’s leadership in low-voltage data center and telecom converters; and (4) Future Challenges and Research Directions—including cost reduction, standardization, sustainability, and digital twin–based health monitoring. The synthesis underscores that packaging and reliability are co-determinants of successful WBG adoption, rather than secondary concerns. The review concludes that the integration of SiC and GaN power electronics hinges on concurrent progress in advanced packaging, predictive reliability modeling, and ecosystem-level standardization. Future research must bridge cost and sustainability barriers while developing cross-disciplinary frameworks that unify material science, system design, and digital intelligence to ensure scalable, efficient, and climate-resilient power conversion systems.

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References

Avraham, T. (2025). Reliability Challenges, Models, and Physics of Silicon Carbide and Gallium Nitride [Review article]. Energies.

Buffolo, M., Favero, D., Marcuzzi, A., De Santi, C., Meneghesso, G., & Meneghini, M. (2023). Review and outlook on GaN and SiC power devices: Industrial state-of-the-art, applications, and perspectives. IEEE Transactions on Electron Devices.

Sharmila, P., et al. (2025). Silicon carbide MOSFETs: A critical review of applications. ScienceDirect article.

“Performance and benefits of GaN versus SiC” (2020). Texas Instruments application note.

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Published

2024-07-01

Submitted

2024-04-24

Revised

2024-05-29

Accepted

2024-06-04

Issue

Section

Articles

How to Cite

Turner, E., & Taha, M. (2024). Wide-Bandgap Power Electronics (SiC/GaN): Packaging, Reliability, and Application Roadmaps. Multidisciplinary Engineering Science Open, 1, 1-11. https://jmesopen.com/index.php/jmesopen/article/view/10

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